FQPF2N60 - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF2N60
Manufacturer	Fairchild Semiconductor
File Size	562.27 KB
Description	600V N-Channel MOSFET
Datasheet	FQPF2N60_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Cur.

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Published: Apr 1, 2005 |