FQPF11P06 60V P-Channel MOSFET

Fairchild Semiconductor

Description

FQPF11P06 P-Channel MOSFET FQPF11P06 P-Channel QFET® MOSFET -60 V, -8.6 A, 175 mΩ March 2013 .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQPF11P06
Manufacturer: Fairchild Semiconductor
File Size: 746.40 KB
Datasheet: FQPF11P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

Features

* -8.6 A, -60 V, RDS(on)=175 mΩ(Max. ) @VGS=-10 V, ID=-4.3 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating S ! GD S TO-220F G!
* ▶▲
* ! D Absolute Maximum Ratings T

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FQPF11P06 60V P-Channel MOSFET Fairchild Semiconductor

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