FQPF11N50CF - 500V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF11N50CF
Manufacturer	Fairchild Semiconductor
File Size	816.64 KB
Description	500V N-Channel MOSFET
Datasheet	FQPF11N50CF_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

11 A, 500 V, RDS(on) = 550 mΩ (Max. ) @ VGS = 10 V, ID = 5.5 A.
Low Gate Charge (Typ. 43 nC).
Low Crss (Typ. 20 pF).
100% Avalanche Tested.
Fast Recovery Body Diode D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanc.

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Published: Jun 4, 2010 |