FQP6N80 - 800V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQP6N80
Manufacturer	Fairchild Semiconductor
File Size	674.37 KB
Description	800V N-Channel MOSFET
Datasheet	FQP6N80 Datasheet
Additional preview pages of the FQP6N80 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current -.

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Published: Apr 1, 2005 |