FQP65N06

The FQP65N06 is N-Channel Power MOSFET designed by Thinki Semiconductor.

Product Overview

Thinki Semiconductor

Datasheet Details

Part number	FQP65N06
Manufacturer	Thinki Semiconductor
File Size	1.12 MB
Description	N-Channel Power MOSFET
Datasheet	FQP65N06-ThinkiSemiconductor.pdf
Additional preview pages of the FQP65N06 datasheet.

Product details

Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Features

65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V.
Low gate charge ( typical 48 nC).
Low Crss ( typical 100 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
175°C maximum junction temperature rating 1. Gate { { 2. Drain.
◀▲.
{ 3. Source BVDSS = 60V RDS(ON) = 0.016 ohm ID = 65A General.

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Other Datasheets by Thinki Semiconductor

FQP50N06 - N-Channel Power MOSFET

Published: Nov 30, 2016 |