FQP3N60C - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQP3N60C
Manufacturer	Fairchild Semiconductor
File Size	1.08 MB
Description	N-Channel MOSFET
Datasheet	FQP3N60C Datasheet
Additional preview pages of the FQP3N60C datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

3.0 A, 600 V, RDS(on) = 3.4 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
Low Gate Charge (Typ. 10.5 nC).
Low Crss (Typ. 5.0 pF).
100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage TC = 25°C unless otherwise noted. Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FQP3N60C 600 3 1.8 12 ±30 (Note.

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Published: Oct 19, 2014 |