FQP3N30 - 300V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP3N30
Manufacturer	Fairchild Semiconductor
File Size	673.84 KB
Description	300V N-Channel MOSFET
Datasheet	FQP3N30_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

3.2 A, 300 V, RDS(on) = 2.2 Ω (Max. ) @ VGS = 10 V, ID = 1.6 A.
Low Gate Charge (Typ. 5.5 nC).
Low Crss (Typ. 6 pF).
100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche.

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Published: Apr 1, 2005 |