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FQNL1N50B 500V N-Channel MOSFET

FQNL1N50B Description

FQNL1N50B March 2001 QFET FQNL1N50B 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQNL1N50B Features

* 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching Improved dv/dt capability D ! " G! ! " " " TO-92L FQNL Series ! GDS S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS IAR EAR

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500V N-Channel MOSFET Fairchild Semiconductor
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