FQN1N50C Datasheet (Fairchild Semiconductor)

FQN1N50C, N-Channel QFET MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQN1N50C Features

* 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A

* Low Gate Charge (Typ. 4.9 nC)

* Low Crss (Typ. 4.1 pF)

* 100% Avalanche Tested D G D S TO-92 FQN Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter D