FQI8P10 - 100V P-Channel MOSFET

Fairchild Semiconductor

The FQI8P10 by Fairchild Semiconductor is a 100V P-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	FQI8P10
Manufacturer	Fairchild Semiconductor
File Size	667.17 KB
Description	100V P-Channel MOSFET
Datasheet	FQI8P10_FairchildSemiconductor.pdf
Additional preview pages of the FQI8P10 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Series G D S I2-PAK FQI Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C).

📁 FQI8P10 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |