FQI8N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

The FQI8N60C by Fairchild Semiconductor is a 600V N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	FQI8N60C
Manufacturer	Fairchild Semiconductor
File Size	644.54 KB
Description	600V N-Channel MOSFET
Datasheet	FQI8N60C_FairchildSemiconductor.pdf
Additional preview pages of the FQI8N60C datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V.
Low gate charge ( typical 28 nC).
Low Crss ( typical 12 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curre.

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Published: Apr 1, 2005 |