FQB9P25 Datasheet (Fairchild Semiconductor)

FQB9P25, 250V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th

FQB9P25 Features

* -9.4 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A

* Low Gate Charge (Typ. 29 nC)

* Low Crss (Typ. 27 pF)

* 100% Avalanche Tested G S D D2-PAK S G D Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR d