FQB19N20L Datasheet (Fairchild Semiconductor)

FQB19N20L, N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQB19N20L Features

* 21̀ A, 200 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V,. ID = 9.7 A

* Low Gate Charge (Typ. 31 nC)

* Low Crss (Typ. 30 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.