FQB12N60 600V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB12N60 / FQI12N60 April 2000 QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

📥 Download Datasheet

FQB12N60 Datasheet Preview — Preview of FQB12N60 PDF

Datasheet Specifications

Part number: FQB12N60
Manufacturer: Fairchild Semiconductor
File Size: 540.78 KB
Datasheet: FQB12N60_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

Features

* 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

FQB12N60 Distributors

📁 Related Datasheet

FQB12N65 FQB10N50CF FQB020ADC-007-M FQB020ADC-007-S FQB020ADC-N07-M FQB020ADC-N07-S

📌 All Tags

FQB12N60 600V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FQB12N60-like datasheet