FQAF9N90 - 900V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQAF9N90
Manufacturer	Fairchild ↗ Semiconductor
File Size	678.30 KB
Description	900V N-Channel MOSFET
Datasheet	FQAF9N90_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

5.9A, 900V, RDS(on) = 1.3Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
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G! G D S TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D.

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Published: Apr 1, 2005 |