FQAF90N08 - 80V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQAF90N08
Manufacturer	Fairchild ↗ Semiconductor
File Size	673.56 KB
Description	80V N-Channel MOSFET
Datasheet	FQAF90N08_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

56A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C).

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Published: Apr 1, 2005 |