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FQA9N90_F109 N-Channel QFET MOSFET

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Description

FQA9N90_F109 * N-Channel QFET® MOSFET FQA9N90_F109 N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω May 2014 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max. ) @ VGS = 10 V, ID = 4.3 A
* Low Gate Charge (Typ. 55 nC)
* Low Crss (Typ. 25 pF)
* 100% Avalanche Tested

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📁 Related Datasheet

FQA9N90-F109 FQA9N90C-F109 FQA90N15-F109 FQA020ADC-007-M FQA020ADC-007-S FQA020ADC-N07-S

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FQA9N90_F109 N-Channel QFET MOSFET Fairchild Semiconductor
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