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FQA9N90 900V N-Channel MOSFET

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Description

FQA9N90 March 2001 QFET FQA9N90 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number
FQA9N90
Manufacturer
Fairchild Semiconductor
File Size
679.16 KB
Datasheet
FQA9N90_FairchildSemiconductor.pdf
Description
900V N-Channel MOSFET

Features

* 8.6A, 900V, RDS(on) = 1.3Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! G DS TO-3P FQA Series ! S Absolute Maximum

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