FQA90N15_F109 N-Channel MOSFET

Fairchild Semiconductor

Description

FQA90N15_F109 * N-Channel QFET® MOSFET FQA90N15_F109 N-Channel QFET® MOSFET 150 V, 90 A, 18 mΩ .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQA90N15_F109
Manufacturer: Fairchild Semiconductor
File Size: 1.15 MB
Datasheet: FQA90N15_F109-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 18 mΩ (Max. ) @ VGS = 10 V, ID = 45 A
* Low Gate Charge (Typ. 220 nC)
* Low Crss (Typ. 200 pF)
* 100% Avalanche Tested

Applications

* such as audio amplifier, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. D G D S TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain C

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📁 Related Datasheet

FQA90N15-F109 FQA9N90-F109 FQA9N90C-F109 FQA020ADC-007-M FQA020ADC-007-S FQA020ADC-N07-S

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FQA90N15_F109 N-Channel MOSFET Fairchild Semiconductor

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