Datasheet4U Logo Datasheet4U.com

FDW254P - P-Channel 1.8V Specified PowerTrench MOSFET

Description

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

8V).

Features

  • 9.2 A,.
  • 20 V. RDS(ON) = 0.012 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.015 Ω @ VGS =.
  • 2.5 V RDS(ON) = 0.0215 Ω @ VGS =.
  • 1.8 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDWS5360L-F085 N-Channel Power MOSFET ON Semiconductor
FDWS9408-F085 N-Channel Power MOSFET ON Semiconductor
FDWS9420-F085 N-Channel Power MOSFET ON Semiconductor
FDWS9511L-F085 P-Channel Power MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDW2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2503N Dual N-Channel 2.5V Specified PowerTrench MOSFET

Full PDF Text Transcription

Click to expand full text
FDW254P August 2000 PRELIMINARY FDW254P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –9.2 A, –20 V. RDS(ON) = 0.012 Ω @ VGS = –4.5 V RDS(ON) = 0.015 Ω @ VGS = –2.5 V RDS(ON) = 0.0215 Ω @ VGS = –1.8 V Applications • Load switch • Motor drive • DC/DC conversion • Power management • Rds ratings for use with 1.
Published: |