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FDU6N20 - MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A.
  • Low gate charge ( Typ. 4.7nC ).
  • Low Crss ( Typ. 6.3pF ).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant May 2007 UniFETTM tm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.5A, 0.8Ω Features • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A • Low gate charge ( Typ. 4.7nC ) • Low Crss ( Typ. 6.3pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant May 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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