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FDU6N20 - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDU6N20
Manufacturer	Fairchild Semiconductor
File Size	311.40 KB
Description	MOSFET
Datasheet	FDU6N20-FairchildSemiconductor.pdf

FDU6N20 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A.
Low gate charge ( Typ. 4.7nC ).
Low Crss ( Typ. 6.3pF ).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant May 2007 UniFETTM tm.

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Published: Jan 12, 2017 |