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FDU6030BL - 30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Key Features

  • 42 A, 30 V RDS(ON) = 16 mΩ @ VGS = 10 V RDS(ON) = 22 mΩ @ VGS = 4.5 V.
  • Low gate charge (22 nC typical).
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6030BL/FDU6030BL July 2001 FDD6030BL/FDU6030BL 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Applications • DC/DC converter • Motor drives Features • 42 A, 30 V RDS(ON) = 16 mΩ @ VGS = 10 V RDS(ON) = 22 mΩ @ VGS = 4.