FDS9936A - Dual N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Datasheet Details

Part number	FDS9936A
Manufacturer	Fairchild Semiconductor
File Size	416.71 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	FDS9936A_FairchildSemiconductor.pdf

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5.5 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V, RDS(ON) = 0.060 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D2 D1 D1 5 4 3 2 1 S FD 6A 3 99 G2 pin 1 6 7 SO-8 S1 G1 S2 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -.

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Published: Mar 30, 2005 |