FDS6814 - Dual N-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDS6814
Manufacturer	Fairchild Semiconductor
File Size	230.94 KB
Description	Dual N-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDS6814_FairchildSemiconductor.pdf

These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process.

8 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V Rugged gate rating ( ±12V). Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.

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Published: Mar 30, 2005 |