FDS6812A - Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDS6812A
Manufacturer	Fairchild Semiconductor
File Size	79.94 KB
Description	Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Datasheet	FDS6812A_FairchildSemiconductor.pdf

FDS6812A Product details

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V.
Low gate charge (12 nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed TA=25 C unless othe.

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Published: Mar 30, 2005 |