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FDMS8050ET30 - MOSFET

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FDMS8050ET30 Product details

Description

Extended TJ rating to 175°C Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or

Features

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