FDMS8020 Datasheet (Fairchild Semiconductor)

FDMS8020, MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod

FDMS8020 Features

* Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 26 A

* Max rDS(on) = 3.6 mΩ at VGS = 4.5 V, ID = 21.5 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

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