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FDMS7672AS - N-Channel MOSFET

Description

Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested

Features

  • General.

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FDMS7672AS N-Channel PowerTrench® SyncFETTM October 2014 FDMS7672AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4 mΩ Features General Description „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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