FDMC86261P - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMC86261P
Manufacturer	Fairchild Semiconductor
File Size	336.78 KB
Description	MOSFET
Datasheet	FDMC86261P Datasheet
Additional preview pages of the FDMC86261P datasheet.

Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. Active Clamp Switch Load Switch Top Bottom Pin 1 SS S G MLP 3.3x3.3 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate

Features

Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A.
Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A.
Very low RDS-on mid voltage P channel silicon technology optimised for low Qg.
This product is optimised for fast switching.

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Published: Jan 10, 2017 |