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FDMC7582 - MOSFET

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FDMC7582 Product details

Description

Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A State-of-the-art switching performance Lower output capacitance, gate resistance, and gate charge boost efficiency Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC

Features

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