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FDD86540 - N-Channel MOSFET

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Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A 100% UIL tested RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.A

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