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FDD86102 - N-Channel MOSFET

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FDD86102 Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Very low Qg and Qgd compared to competing trench technologies Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTre

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