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FDD86326 - N-Channel MOSFET

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FDD86326 Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant This N-Channel MOSFET is produ

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