FDD8453LZ_F085 - N-Channel Power Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD8453LZ_F085
Manufacturer	Fairchild Semiconductor
File Size	346.75 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDD8453LZ_F085 Datasheet
Additional preview pages of the FDD8453LZ_F085 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. Inverter Synchronous Rectifier Package D G S D-PAK (TO-252) ©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev.C1 Symbol D G S 1 www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET MOSFET Maximu

Features

Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A.
Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A.
HBM ESD protection level > 7kv typical.
RoHS Compliant.
Qualified to AEC Q101 General.

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Published: Aug 7, 2015 |