FDD8453LZ - N-Channel Power Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD8453LZ
Manufacturer	Fairchild Semiconductor
File Size	444.27 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDD8453LZ Datasheet
Additional preview pages of the FDD8453LZ datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. Inverter Synchronous Rectifier D G S D DT O- P-2A5K2 (TO-252) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Dra

Features

Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A.
Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A.
HBM ESD protection level >7kV typical (Note 4).
RoHS Compliant General.

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Published: Aug 7, 2015 |