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FDD6670S 30V N-Channel MOSFET

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Description

FDD6670S September 2001 FDD6670S 30V N-Channel PowerTrench® SyncFET ™ General .
The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies.

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Datasheet Specifications

Part number
FDD6670S
Manufacturer
Fairchild Semiconductor
File Size
97.42 KB
Datasheet
FDD6670S_FairchildSemiconductor.pdf
Description
30V N-Channel MOSFET

Features

* 64 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (17nC typical)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability . Appl

Applications

* DC/DC converter
* Motor Drives D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Power Dissipation T A =25 oC unless otherwise noted Parameter Ratings 30 ±20 (Note 3)

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