Datasheet Details
Part number:
FDD6N50TM-F085
Manufacturer:
File Size:
972.87 KB
Description:
N-Channel MOSFET
FDD6N50TM-F085 500V N-Channel MOSFET FDD6N50TM-F085 500V N-Channel MOSFET Features * 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V * Low gate charge ( typical 12.8 nC) * Low Crss ( typical 9 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capabil
FDD6N50TM-F085-ONSemiconductor.pdf
FDD6N50TM-F085, N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy
FDD6N50TM-F085 Distributor
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