FDD603AL - N-Channel MOSFET

Fairchild Semiconductor

FDD603AL Datasheet Preview — Preview of FDD603AL PDF

Datasheet Details

Part number	FDD603AL
Manufacturer	Fairchild ↗ Semiconductor
File Size	237.55 KB
Description	N-Channel MOSFET
Datasheet	FDD603AL_FairchildSemiconductor.pdf

FDD603AL Product details

Description

This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology.

Features

33 A, 30 V. RDS(ON) = 0.023 Ω @ VGS = 10 V RDS(ON) = 0.037 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RDS(ON).

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Published: Mar 30, 2005 |