FDC658P - Single P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDC658P
Manufacturer	Fairchild Semiconductor
File Size	249.45 KB
Description	Single P-Channel MOSFET
Datasheet	FDC658P_FairchildSemiconductor.pdf

FDC658P Product details

Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 8 .65 G D 2 5 SuperSOT TM -6 pin 1 D 3 4 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise note Ratings Units VDSS VGSS ID P.

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Published: Mar 30, 2005 |