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FDC6392S - P-Channel MOSFET & Schottky Diode

Description

The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.

This device is designed specifically as a single package solution for DC to DC converters.

Features

  • a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features MOSFET:.
  • 2.2 A,.
  • 20V. RDS(ON) = 150 mΩ @ VGS =.
  • 4.5V RDS(ON) = 200 mΩ @ VGS =.
  • 2.5V.
  • Low Gate Charge (3.7nC typ).
  • Compact industry standard SuperSOT-6 package Schottky:.
  • VF < 0.45 V @ 1 A S1 D1 D2 1 G2 S2 6 5 4 2 3 SuperSOT TM -6 Pin 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC6392S April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features MOSFET: • –2.2 A, –20V. RDS(ON) = 150 mΩ @ VGS = –4.5V RDS(ON) = 200 mΩ @ VGS = –2.5V • Low Gate Charge (3.7nC typ) • Compact industry standard SuperSOT-6 package Schottky: • VF < 0.
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