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FDB6670S N-Channel MOSFET

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Description

FDP6670S/FDB6670S September 2001 FDP6670S/FDB6670S 30V N-Channel PowerTrench® SyncFET ™ General .
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

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Features

* 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (23nC typical)
* High performance trench technology for extremely low RDS(ON) and fast switching
* High power and current handl

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