FDB5800 N-Channel MOSFET

Fairchild Semiconductor

Description

FDB5800 * N-Channel Logic Level PowerTrench® MOSFET FDB5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ November 2013 Featur.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

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Datasheet Specifications

Part number: FDB5800
Manufacturer: Fairchild Semiconductor
File Size: 663.66 KB
Datasheet: FDB5800-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 4.6 mΩ (Typ. ), VGS = 10 V, ID = 80 A
* High Performance Trench Technology for Extermly Low RDS(on)
* Low Gate Charge
* High Power and Current Handing Capability

Applications

* Power tools
* Motor drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC < 102oC, VGS = 10 V) - Con

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FDB5800 N-Channel MOSFET Fairchild Semiconductor

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