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FDB390N15A N-Channel MOSFET

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Description

FDB390N15A * N-Channel PowerTrench® MOSFET April 2015 FDB390N15A N-Channel PowerTrench® MOSFET 150 V, 27 A, 39 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

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Features

* RDS(on) = 33.5 mΩ (Typ. ) @ VGS = 10 V, ID = 27 A
* Fast Switching Speed
* Low Gate Charge, QG = 14.3 nC (Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Consumer Appliances
* LED TV
* Synchronous Rectification
* Uninterruptible Power Supply
* Micro Solar Inverter D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter

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