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FDB28N30 - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDB28N30
Manufacturer	Fairchild Semiconductor
File Size	289.87 KB
Description	MOSFET
Datasheet	FDB28N30-FairchildSemiconductor.pdf

FDB28N30 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 0.108Ω ( Typ. )@ VGS = 10V, ID = 14A.
Low gate charge ( Typ. 39nC).
Low Crss ( Typ. 35pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant June 2007 UniFETTM tm.

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Published: Jan 13, 2017 |