FDB28N30 MOSFET

Fairchild Semiconductor

Description

FDB28N30 N-Channel MOSFET FDB28N30 N-Channel MOSFET 300V, 28A, 0.129Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FDB28N30
Manufacturer: Fairchild Semiconductor
File Size: 289.87 KB
Datasheet: FDB28N30-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 0.108Ω ( Typ. )@ VGS = 10V, ID = 14A
* Low gate charge ( Typ. 39nC)
* Low Crss ( Typ. 35pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FDB28N30 Distributors

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FDB28N30 MOSFET Fairchild Semiconductor

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