FDB2710 - N-Channel MOSFET

Fairchild Semiconductor

FDB2710 Datasheet Preview — Preview of FDB2710 PDF

Datasheet Details

Part number	FDB2710
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.14 MB
Description	N-Channel MOSFET
Datasheet	FDB2710_FairchildSemiconductor.pdf

FDB2710 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD Drain-Source Voltage Gate-S

Features

RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
High Performance Trench Technology for Extremely Low RDS(on).
Low Gate Charge.
High Power and Current Handing Capability General.

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Published: Feb 16, 2007 |