FDB035N10A N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDB035N10A * N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resista.

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Datasheet Specifications

Part number: FDB035N10A
Manufacturer: Fairchild Semiconductor
File Size: 539.06 KB
Datasheet: FDB035N10A-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Features

* RDS(on) = 3.0 mΩ ( Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 89 nC ( Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and Uninterruptible Power Supplies
* Micro Solar Inverter D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDB03

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FDB035N10A N-Channel PowerTrench MOSFET Fairchild Semiconductor

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