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FCI25N60N_F102 N-Channel SupreMOS MOSFET

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Description

FCI25N60N_F102 N-Channel MOSFET March 2013 FCI25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ .
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling proce.

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Features

* RDS(on) = 107 mΩ (Typ. )@ VGS = 10 V, ID = 12.5 A
* Ultra Low Gate Charge (Typ. Qg = 57 nC)
* Low Effective Output Capacitance (Typ. Coss. eff = 262 pF)
* 100% Avalanche Tested

Applications

* Solar Inverter

FCI25N60N_F102 Distributors

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📌 All Tags

FCI25N60N_F102 N-Channel SupreMOS MOSFET Fairchild Semiconductor
Fairchild Semiconductor FCI25N60N_F102-like datasheet
FCI25N60N
FCI11N60
FCI7N60