FCI25N60N N-Channel SupreMOS MOSFET

Fairchild Semiconductor

Description

FCI25N60N * N-Channel SupreMOS® MOSFET FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ November 2013 .
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

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Datasheet Specifications

Part number: FCI25N60N
Manufacturer: Fairchild Semiconductor
File Size: 575.22 KB
Datasheet: FCI25N60N_FairchildSemiconductor.pdf
Description: N-Channel SupreMOS MOSFET

Features

* RDS(on) = 107 mΩ (Typ. ) @ VGS = 10 V, ID = 12.5 A
* Ultra Low Gate Charge (Typ. Qg = 57 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 262 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain

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📁 Related Datasheet

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📌 All Tags

FCI25N60N N-Channel SupreMOS MOSFET Fairchild Semiconductor

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