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FCH47N60N N-Channel MOSFET

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Description

www.DataSheet.co.kr FCH47N60N 600V N-Channel MOSFET SupreMOS FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ .
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it.

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Features

* 650V @TJ = 150 C
* RDS(on) = 51.5mΩ ( Typ. )@ VGS = 10V, ID =23.5 A
* Ultra Low Gate Charge ( Typ. Qg =115nC)
* Low Effective Output Capacitance
* 100% Avalanche Tested

Applications

* D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy M

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