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FCH47N60NF - N-Channel MOSFET

General Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super

junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

resis

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 57.5 mW.
  • Ultra Low Gate Charge (Typ. Qg = 240 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, SUPREMOS, FRFET 600 V, 48.5 A, 65 mW FCH47N60NF Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPREMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 57.